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 TLC.51..
Vishay Semiconductors
Ultrabright LED, o 5 mm Untinted Non-Diffused
Color Red Yellow True Green Blue TLCR51.. TLCY51.. TLCTG51.. TLCB51.. Type Technology AlInGaP on GaAs AlInGaP on GaAs InGaN on SiC InGaN on SiC Angle of Half Intensity o 9 9 9 9
Description
The TLC.51.. series is a clear, non diffused 5 mm LED for high end applications where supreme luminous intensity is required. These lamps with clear untinted plastic case utilize the highly developed ultrabright AlInGaP (AS) and InGaN technologies. The lens and the viewing angle is optimized to achieve best performance of light output and visibility.
94 8631
Features
D Untinted non diffused lens D Utilizing ultrabright AlInGaP (AS) and InGaN technology D High luminous intensity D High operating temperature: Tj (chip junction temperature) up to +125C for AlInGaP devices D Luminous intensity and color categorized for each packing unit D ESD-withstand voltage: 2 kV acc. to MIL STD 883 D, Method 3015.7 for AlInGaP, 1 kV for InGaN
Applications
D Interior an exterior lighting D Outdoor LED panels D Instrumentation and front panel indicators D Central high mounted stop lights (CHMSL) for motor vehicles D Replaces incandescent lamps D Traffic signals and signs D Light guide design
Document Number 83176 Rev. A1, 05-Mar-02
www.vishay.com 1 (7)
TLC.51..
Vishay Semiconductors Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified TLCR51.. , TLCY51.. Parameter Reverse voltage DC forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Tamb = 25_C, unless otherwise specified TLCTG51.. , TLCB51.. Parameter Reverse voltage DC forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient t5s Tamb 60C tp 10 ms Tamb 60C Test Conditions Symbol VR IF IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 30 0.1 135 100 -40 to +100 -40 to +100 260 300 Unit V mA A mW C C C C K/W t5s Tamb 85C tp 10 ms Tamb 85C Test Conditions Symbol VR IF IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 50 1 135 125 -40 to +100 -40 to +100 260 300 Unit V mA A mW C C C C K/W
Optical and Electrical Characteristics
Tamb = 25_C, unless otherwise specified Red (TLCR51.. ) Parameter Luminous intensity Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Temperature coefficient of VF Temperature coefficient of ld Test Conditions IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IR = 10 mA IF = 50 mA IF = 50 mA Type TLCR5100 Symbol IV ld lp Dl VF VR TCVF TCld 5 -3.5 0.05 Min 4300 611 Typ 11000 616 622 18 9 2.1 2.7 622 Max Unit mcd nm nm nm deg V V mV/K nm/K
Spectral bandwidth at 50% Irel max IF = 50 mA
www.vishay.com 2 (7)
Document Number 83176 Rev. A1, 05-Mar-02
TLC.51..
Vishay Semiconductors
Yellow (TLCY51.. ) Parameter Luminous intensity Dominant wavelength Peak wavelength Spectral bandwidth at 50% Irel max Angle of half intensity Forward voltage Reverse voltage Temperature coefficient of VF Temperature coefficient of ld Test Conditions IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IR = 10 mA IF = 50 mA IF = 50 mA Type TLCY5100 Symbol IV ld lp Dl VF VR TCVF TCld Min 3200 585 Typ 7500 590 593 17 9 2.1 -3.5 0.1 Max 597 Unit mcd nm nm nm deg V V mV/K nm/K
2.7
5
True Green (TLCTG51.. ) Parameter Luminous intensity Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Temperature coefficient of VF Temperature coefficient of ld Test Conditions IF = 30 mA IF = 30 mA IF = 30 mA IF = 30mA IF = 30 mA IR = 10 mA IF = 30 mA IF = 30 mA Type TLCTG5100 Symbol IV ld lp Dl VF VR TCVF TCld 5 -4.5 0.02 Min 1800 515 Typ 5000 525 520 37 9 3.9 4.5 535 Max Unit mcd nm nm nm deg V V mV/K nm/K
Spectral bandwidth at 50% Irel max IF = 30 mA
Blue (TLCB51.. ) Parameter Luminous intensity Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Temperature coefficient of VF Temperature coefficient of ld Test Conditions IF = 30 mA IF = 30 mA IF = 30 mA IF = 30 mA IF = 30 mA IR = 10 mA IF = 30 mA IF = 30 mA Type TLCB5100 Symbol IV ld lp Dl VF VR TCVF TCld 5 -5.0 0.02 Min 575 462 Typ 1500 470 464 25 9 3.9 4.5 476 Max Unit mcd nm nm nm deg V V mV/K nm/K
Spectral bandwidth at 50% Irel max IF = 30 mA
Document Number 83176 Rev. A1, 05-Mar-02
www.vishay.com 3 (7)
TLC.51..
Vishay Semiconductors Typical Characteristics (Tamb = 25_C, unless otherwise specified)
160 PV -Power Dissipation (mW) I F-Forward Current ( mA ) 140 120 100 80 60 40 20 0 0
16708
60 50 40 30 20 10 0 20 40 60 80 100 120
16710
Yellow Red
Yellow Red
0
20
40
60
80
100
120
Tamb - Ambient Temperature ( C )
Tamb - Ambient Temperature ( C )
Figure 1. Power Dissipation vs. Ambient Temperature
160 PV -Power Dissipation (mW)
Figure 4. Forward Current vs. Ambient Temperature
60 I F-Forward Current ( mA ) 50 40 30 20 10 0 Blue Truegreen
140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C ) Blue Truegreen
0
16711
10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C )
16709
Figure 2. Power Dissipation vs. Ambient Temperature
100 90 I F - Forward Current ( mA ) 80 70 60 50 40 30 20 10 0
15974
Figure 5. Forward Current vs. Ambient Temperature
100
Red, Yellow I F - Forward Current ( mA )
90 80 70 60 50 40 30 20 10 0 2.5
16040
Blue Truegreen
1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 VF - Forward Voltage ( V )
3.0
3.5 4.0 4.5 5.0 VF - Forward Voltage ( V )
5.5
Figure 3. Forward Current vs. Forward Voltage
Figure 6. Forward Current vs. Forward Voltage
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Document Number 83176 Rev. A1, 05-Mar-02
TLC.51..
Vishay Semiconductors
10.00 IVrel- Relative Luminous Flux IVrel- Relative Luminous Flux Red 1.00 10.00 Yellow
1.00
0.10
0.10
0.01 1
15978
0.01 10 IF - Forward Current ( mA ) 100
15979
1
10 IF - Forward Current ( mA )
100
Figure 7. Relative Luminous Intensity vs. Forward Current
10.00 IVrel- Relative Luminous Flux
Figure 10. Relative Luminous Intensity vs. Forward Current
10.00 IVrel- Relative Luminous Flux
Blue 1.00
True Green 1.00
0.10
0.10
0.01 1
16042
0.01 10 IF - Forward Current ( mA ) 100
16039
1
10 IF - Forward Current ( mA )
100
Figure 8. Relative Luminous Intensity vs. Forward Current
1.2 Red IF = 50 mA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 570 580 590 600 610 620 630 640 650 660 670 l - Wavelength ( nm )
Figure 11. Relative Luminous Intensity vs. Forward Current
1.2 Yellow IF = 50 mA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 540 550 560 570 580 590 600 610 620 630 640 l - Wavelength ( nm )
IVrel- Relative Luminous Intensity
16007
16008
Figure 9. Relative Luminous Intensity vs. Wavelength
Figure 12. Relative Luminous Intensity vs. Wavelength
Document Number 83176 Rev. A1, 05-Mar-02
IVrel- Relative Luminous Intensity
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TLC.51..
Vishay Semiconductors
1.2 Blue IF = 30 mA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 400 420 440 460 480 500 520 540 560 l - Wavelength ( nm ) 1.2 True Green IF = 30 mA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 460 480 500 520 540 560 580 600 620 l - Wavelength ( nm )
IVrel- Relative Luminous Intensity
16069
16068
Figure 13. Relative Luminous Intensity vs. Wavelength
Figure 14. Relative Luminous Intensity vs. Wavelength
Dimensions in mm
IVrel- Relative Luminous Intensity
96 12121
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Document Number 83176 Rev. A1, 05-Mar-02
TLC.51..
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83176 Rev. A1, 05-Mar-02
www.vishay.com 7 (7)


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